| 摘要 |
PURPOSE: A method for manufacturing a memory device for improving reliability is provided to improve reliability by preventing a flowable oxide(Fox) layer from exposing to an opening sidewall for a repair. CONSTITUTION: A metal layer is formed on a material layer(50) having a bit line and a contact. The metal layer is patterned by using a mask for forming a metal pattern while the second metal pattern(56b) is formed on the first metal pattern(56a) connected to the contact, among the metal pattern and on a region where a bit line is not formed. The first oxidation layer(58), a flowable oxide(Fox) layer(60), the second oxidation layer(62) and a passivation layer(64) are sequentially evaporated on the material layer including the first and second metal patterns. A portion where a defect is found by a reliability test, is opened while the passivation layer, second oxidation layer, Fox layer and first oxidation layer are sequentially etched to form an opening among the second metal pattern.
|
