| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element using such a III-V nitride compound semiconductor that can reduce the threshold current density by hardly raising the operating voltage. SOLUTION: The p-type clad layer of a GaN semiconductor laser is constituted of two or more semiconductor layers having different band gaps and, in addition, the part of the p-type clad layer near the active layer-side interface of the layer is constituted of a semiconductor layer having a larger band gap than the other part has. To be concrete, in the GaN semiconductor laser having an AlGaN/GaN/GaInN SCH structure, the p-type AlGaN clad layer 10 is constituted of a p-type Alx1Ga1-x1N layer 10a which is in contact with a p-type GaN optical waveguide layer 9 and a p-type Alx2Ga1-x2N layer 10b (0<=x2<x1<=1) formed on the layer 10a. |
