| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, which comprises a plurality of resistance elements having a stable and high-precision resistance ratio, where the fluctuation caused by the absorption of hydrogen is suppressed, with no dependence on the layout of wiring comprising such material as of high absorptivity of hydrogen. SOLUTION: On a silicon substrate 10, polycrystalline silicon resistance regions 16a and 16b constituting a polycrystalline silicon resistance element, respectively, are formed via a field silicon oxide film 12 and silicon oxide film 14. A Ti group barrier metal/Al wiring layer 26 is formed only on an interlayer insulating film 20, which is positioned above one polycrystalline silicon resistance region 16a, while a surface protective film 28 having a multilayered structure comprising a silicon oxide film 30, a Ti thin film 32, and a silicon nitride film 34 is formed on the entire surface. In short, the upper part of the polycrystalline silicon resistance regions 16a and 16b is completely coated with the Ti thin-film 32.
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