发明名称 LEAD FRAME FOR SEMICONDUCTOR PACKAGE AND METHOD FOR PLATING LEAD FRAME
摘要 <p>PURPOSE: A lead frame for semiconductor package and a method for plating a lead frame are provided to form a lead frame having a plated protective layer by applying a modulated current to an upper face of an intermediate layer. CONSTITUTION: An intermediate layer(32) is formed at one side of a metal substrate(31). A modulated current is applied to an upper face of the intermediate layer(32) by using one or more material of a palladium, palladium alloy, gold, gold alloy, silver, and silver alloy. A plated protective layer(33) of 0.01 to 1.5 micro inches is formed therefrom. The intermediate layer(32) is formed with nickel and nickel alloy.</p>
申请公布号 KR100275381(B1) 申请公布日期 2000.12.15
申请号 KR19980013927 申请日期 1998.04.18
申请人 SAMSUNG TECHWIN CO., LTD. 发明人 PARK, SE CHUL;LEE, KYU HAN;KIM, JU BONG;KANG, SUNG IL;SHIN, DONG IL;JANG, BAE SOON
分类号 H01L23/50;H01L21/48;H01L23/495;(IPC1-7):H01L23/50 主分类号 H01L23/50
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