MANUFACTURING METHOD OF FERROELECTRIC THIN FILM

摘要

PURPOSE: A method for manufacturing a ferroelectric thin film is provided to restrict a fine crack by using a sputtering method or a laser ablation method. CONSTITUTION: A ferroelectric thin film(120) of Pb(Zr1-xTix)O3 is formed by using one method selected from a pure sol-gel method such as a spin coating and a dip coating, MOCVD, LSCVD, and MOD. A buffering layer(110,130) including a component of Pb is inserted in the process for manufacturing the ferroelectric thin film(120). The buffering layer(110,130) has a thickness of 10-100nm. The buffering layer(110,130) is formed with one of Pb(Zr1-xTix))3, PbO, and PbTiO3 including Pb.