发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION FOR EXPOSURE TO FAR ULTRAVIOLET RAY
摘要 PROBLEM TO BE SOLVED: To obtain a positive type photoresist composition having good compatibility with a resin when dissolved in an organic solvent, excellent in aging stability of the solution and excellent also in sensitivity and resolution to a short wavelength light source by incorporating a specified compound and a resin which has specified repeating units, is decomposed by the action of an acid and increases its alkali solubility. SOLUTION: The photoresist composition contains a compound of formula I or II which generates an acid when irradiated with active light or radiation and a resin which has specified repeating units of formula III, is decomposed by the action of the acid and increases its alkali solubility. In the formulae I and II, R1-R5 are each H, an alkyl which may have a substituent or the like, (a) is 1-5, (b) is 1-5, (1) is 1-5, (m) is 0-5 and (n) is 0-5. In the formula III, Rb1 is H, a halogen or a 1-4C linear or branched alkyl and Rb2-Rb4 are each H or hydroxyl.
申请公布号 JP2000347409(A) 申请公布日期 2000.12.15
申请号 JP19990158695 申请日期 1999.06.04
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;KODAMA KUNIHIKO;AOSO TOSHIAKI
分类号 H01L21/027;G03F7/039 主分类号 H01L21/027
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