HIGH POWER BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THEREOF

摘要

PURPOSE: A high power bipolar transistor and a method for manufacturing the same are provided to improve a driving capacity of current by forming deeply the second emitter region. CONSTITUTION: An epitaxial layer(47) of the second conductive type is formed on a semiconductor substrate of the first conductive type. A buried layer of the second conductive type is formed on a part of the epitaxial layer(47). An isolation region(53) of the first conductive type is formed around the buried layer. The second emitter region(51) of the first conductive type is formed within the isolation region(53). The first emitter region(57) and a collector region(59) of the first conductive type are formed within the second emitter region(51) and between the second emitter region(51) and the isolation region(53), respectively. A base region(65) of the second conductive type is formed between the first emitter region(57) and the collector region(59). An insulating oxide layer(67) is formed on the epitaxial layer(47). A base electrode, an emitter electrode, and a base electrode are formed on the exposed base region, the first emitter region(57), and the collector region(59), respectively.