MANUFACTURING METHOD OF CAPACITOR OF THE SEMICONDUTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent a damage of a titanium nitride layer by changing a titanium layer to an oxygen-lack titanium oxide layer. CONSTITUTION: A storage electrode contact hole is formed on an upper portion of a semiconductor substrate(100). A contact plug(108) is formed to fill the storage electrode contact hole. A metal diffusion barrier pattern is formed on the contact plug. The metal diffusion barrier pattern is formed with a titanium layer/titanium oxide layer(112)/titanium nitride layer(114) pattern. An anti-oxygen layer(116,118) pattern is formed on the metal diffusion barrier pattern. A storage electrode is formed by depositing a platinum layer(120) on the anti-oxygen layer pattern. A dielectric layer(122) is formed on the storage electrode. A plate electrode(124) is formed by depositing a platinum layer on the dielectric layer(122).