REFERENCE VOLTAGE GENERATOR OF FERAM DEVICE

摘要

PURPOSE: A reference voltage generator of a ferroelectric material memory device is provided to alternatively store "0" and "1" according to the change of an address in a reference cell, so as to reduce the deterioration due to the fatigue of the reference cell to a half and extend the durability of a chip. CONSTITUTION: A reference cell circuit(30-1) stores information for producing a reference voltage. A precharge circuit(30-2) pre-charges a reference bit line to a ground level, to eliminate a voltage difference between both terminals of a ferroelectric material capacitor. A reference bit line equalize circuit(30-3) distributes charges of the reference bit line. A reference cell information control circuit(30-4) controls storage information(0 and 1) inside a reference cell to be alternatively stored. And a reference cell information control signal generating circuit(30-5) is driven by a predetermined address and reference cell information driving signal, to output the first and the second reference cell information control signal for controlling the operation of the reference cell information control circuit(30-4).