METHOD OF COMPENSATING THE PROXIMITY EFFECT IN ELETRON BEAM EXPOSURE SYSTEMS

摘要

PURPOSE: A method for correcting a proximity effect in an exposure system is provided to correct a proximity effect generated when a pattern is formed on a wafer. CONSTITUTION: A beam source portion(10) generates a controlled electron beam in order to form an IC(Integrated Circuit) pattern on a target(20) located on a target area. The first modification portion(12) has the first aperture(14) for modifying a sectional shape of the electron beam transmitted from the beam source portion(10). The second modification portion(16) has the second aperture(18) for modifying the electron beam modified from the first modification portion(12). The second aperture(18) is formed to embody a shape of a corrected pattern. The corrected pattern that added to an existing pattern is exposed.