发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide semiconductor devices and the manufacturing method thereof wherein a semiconductor wafer is protected from a contamination due to an adhesion of a foreign material to the devices and the handling of the wafer is facilitated. SOLUTION: In the manufacturing method of semiconductor devices, which manufactures a semiconductor material formed by sealing a semiconductor wafer 1 with a resin, the wafer 1 formed with a plurality of semiconductor elements 1' is pinched in between two sheetlike resin films 3 to thermally pressure-bond the films 3 to the wafer 1, thereby forming a resin layer 3. Through holes 3a to penetrate the layer 3 are formed in this layer 3 in the state corresponding to the positions of electrodes 2. After conductive parts 7 made to have continuity with the electrodes are respectively formed in each of these holes 3a, the wafer 1 is cut to obtain a plurality of the semiconductor devices 26. As a result, the layer 3 for sealing is formed on the electrode formation surface of the wafer 1 in the early stage of the manufacturing process of the devices 26 and with the wafer 1 protected from a contamination due to an adhesion of a foreign material to the devices in the manufacturing process, and the handling of the wafer 1 can be facilitated.</p>
申请公布号 JP2000349114(A) 申请公布日期 2000.12.15
申请号 JP19990159089 申请日期 1999.06.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAJI HIROSHI;ARITA KIYOSHI;NODA KAZUHIRO
分类号 H01L23/12;H01L21/56;H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L23/12
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