METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to omit a storage node contact etching process by forming a bit line directly on a storage node contact. CONSTITUTION: A gate oxide layer and a gate electrode(1) are formed on a semiconductor substrate including a field oxide layer. An oxide layer is deposited on the gate electrode. The first oxide layer spacer(2) is formed on a sidewall of the gate electrode. The first storage node electrode(5) and the interlayer dielectric are deposited on the whole face of the substrate. The second oxide layer spacer(7) is formed on a stepped sidewall between the interlayer dielectric and the first storage node electrode(5). A bit line and a bit line oxide layer(9) are formed by burying a conductive material and an oxide layer into a contact hole. The third oxide layer spacer(10) is formed on a stepped sidewall between the bit line and the bit line oxide layer(9). A polysilicon layer for the second storage node electrode and an oxide layer(12) are deposited thereon. The second storage node electrode mask pattern is formed by a photoresist layer. The fourth oxide layer spacer(14) is formed by etching selectively the oxide layer(12). The fourth oxide layer spacer(14) is removed from the oxide layer(12) and a sidewall of the oxide layer(12).