BIOPOLAR TRANSISITER AND MAKING METHOD THEREOF

摘要

PURPOSE: A bipolar junction transistor and a method for manufacturing the same are provided to reduce power consumption and improve a frequency characteristic by simplify a manufacturing process. CONSTITUTION: A buried oxide layer(22), an SOI(Silicon On Insulator) layer, and a field oxide layer(24) are formed on a silicon substrate(21). A collector region is formed by implanting n-type dopant ions into the SOI layer. A TEOS(Tetra Ethyl Ortho Silicate) layer(25) is formed thereon. A photoresist pattern is formed on the TEOS layer(25). A p- ion implantation region(27) is formed at both ends of an n- collector region(23A). The p- ion implantation region(27) is etched partially and the photoresist pattern is removed. A polysilicon layer is deposited thereon. A photoresist pattern is formed on the polysilicon layer. A n+ collector(30) and an n+ emitter(31) are formed by etching the polysilicon layer. The photoresist pattern is removed.