SUPER SELF-ALIGNED BIPOLAR TRANSISTOR AND ITS FABRICATION METHOD

摘要

PURPOSE: A super self-aligned bipolar transistor and a method for manufacturing the same are provided to minimize a parasitic resistance by using a polysilicon thin film and a metal silicide thin film. CONSTITUTION: A conductive buried collector(3) is formed locally on a semiconductor substrate(3a,3b). The first insulating layer(3e), the second insulating layer(3f), and a conductive base thin film are laminated sequentially on the conductive buried collector(3). The conductive buried collector(3) is exposed from a device active region defined on the conductive buried collector(3). A single crystal semiconductor field thin film is formed on a field region. The first insulating layer(3e) is formed at the first insulating layer(3e), the second insulating layer(3f), and a sidewall of the conductive base electrode thin film. A signal crystal collector thin film is formed on the exposed buried collector(3). A conductive base thin film is formed on the conductive base electrode thin film. The third insulating layer(3i) is patterned to expose the base thin film. A conductive emitter thin film is formed on the exposed base thin film. The conductive emitter thin film is isolated from the base electrode thin film. A metal silicide layer is formed the exposed base thin film and the emitter thin film. The fourth insulating layer(3k) is applied thereon.