| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory cell which does not require a refreshing operation for holding information. SOLUTION: A semiconductor memory cell is composed of a first conductivity-type first transistor TR1, a second conductivity-type second transistor TR2, and an information-holding MIS-type diode DT, where one of the source/drain regions of the first transistor TR1 is corresponding to the channel forming region CH2 of the second transistor TR2, one of the source/drain regions of the second transistor TR2 is corresponding to the channel forming region CH1 of the first transistor TR1, one end of the MIS-type diode DT is formed of the extension of the channel forming region CH1 of the first transistor TR1, and the other end of the MIS-type diode DT is formed of conductive material which serves as an electrode connected to a third wiring kept at a prescribed potential. |
