发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the refresh characteristic without increase of a sense current and without any delay of sense operation. SOLUTION: For the sense amplifier circuit group 5, a decoupling capacitor 10 is coupled with a sense power supply line 3 and this sense power supply line 3 is coupled selectively with the power supply node GND depending on the operation mode of the sense amplifier. During the sense operation, a bit line potential is defined with redistribution of charges between the decoupling capacitor 10 and bit line load capacitor.
申请公布号 JP2000348488(A) 申请公布日期 2000.12.15
申请号 JP19990160853 申请日期 1999.06.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 KONO TAKASHI;HAMAMOTO TAKESHI
分类号 G11C11/409;G11C11/401;G11C11/406;G11C11/407;G11C11/4074;G11C11/4091;H01L21/8242;H01L27/108 主分类号 G11C11/409
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