发明名称 DIELECTRIC CAPACITOR, MEMORY AND MANUFACTURE OF THE SAME
摘要 PROBLEM TO BE SOLVED: To enable a second electrode to be easily and finely processed so as to scale down a device in size by a method wherein the second electrode is formed of one of precious metal elements, one of transition metal elements, and a second electrode oxygen-containing layer which contains oxygen-containing material represented by a specific composition formula. SOLUTION: A dielectric capacitor 10 is supported with a base 11, and a lower electrode 12 and an upper electrode (second electrode) 14 are connected to a dielectric film 13. The second electrode 14 is composed of an oxygen-containing layer 14a as thick as 200 nm or so and a precious metal layer 14b which is provided between the layer 14a and the dielectric film 13 and as thick as 20 nm or so. The oxygen- containing layer 14a contains at least one element selected out of a precious metal element group, at least one element selected out of transition metal elements composed of hafnium, tantalum, zirconium, niobium, vanadium, molybdenum, tungsten, and rare earth elements, and oxygen-containing material (MIaMIIbOc, MI: precious metal element, MII: transition metal element). At this point, in a composition formula, MIaMIIbOc, which indicates the composition of oxygen-containing material by atom%, a, b, and c are so set as to satisfy formulas, 90>=a>=4, 15>=b>=2, c>=4, and a+b+c=100.
申请公布号 JP2000349245(A) 申请公布日期 2000.12.15
申请号 JP19990155391 申请日期 1999.06.02
申请人 SONY CORP 发明人 KATORI KENJI
分类号 H01L21/8247;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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