| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device for high frequency of a structure wherein, when an element is thermally pressure-bonded to a wiring board or the like while bump electrodes are directly formed on electrodes on the narrow active region of the element, it is not caused that a pressure is concentrated on the narrow active region and the active region is broken and the shortage of the adhesive strength of the element to the wiring board is not caused. SOLUTION: This semiconductor device is constituted into a structure, wherein a semiconductor laminated part 5 comprising at least n+ and p+ semiconductor layers 2 and 4 is formed on a substrate 1, an operating region 6 is etched in a mesa type in such a way that the lower layer 2 of the laminated part 5 is exposed. An (n) side electrode 7 and a (p) side electrode 8 are respectively provided on the exposed layer 2 and the upper layer 4 of the laminated part 5. Moreover, mesa parts 9 and 10 respectively consisting of each semiconductor laminated part 5 are provided on the lateral sides of the region 6 in such a way that the region 6 is positioned in the center part between the mesa parts 9 and 10, one of the mesa parts 9 and 10 electrically connected with the electrode 7, a first bump electrode 11 is provided on the electrode 7, and second and third bump electrodes 12 and 13 are respectively provided on the electrode 8 and the remaining mesa part 10.</p> |
