| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing a semiconductor device capable of reliably subjecting a Cu film of a wiring material of a semiconductor device to a predetermined heat treatment without changing a laser heat treatment apparatus, even if the Cu film is thick. SOLUTION: A wiring trench 12 is formed on an insulating film 11 on a semiconductor substrate 10 and then a Cu film 13 is formed. Then, the uppermost surface of the Cu film 13 is oxidized to reduce its refractive index for laser light to increase the efficiency of energy of the applied laser light. Thereafter, the laser light is applied to the Cu film 13 to melt it, whereby the Cu 13 is buried in the wiring trench 13.
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