DRY ETCHING AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor device which can prevent etching damage of an underlying gate oxide film and have no defect caused by etching residue. SOLUTION: A gate electrode 3 is formed on a silicon substrate 1 having a gate insulating film 2 formed thereon. A polycrystalline silicon film 8 is deposited on the substrate 1 so as to cover the gate electrode 3. At the time of removing a part of the silicon film 8 contacted with one of both side surface of the gate electrode 3, the parts of the film 8 other than the part to be removed are covered with a resist mask 11 and then subjected to a chemical dry etching process. The etching is first executed under a condition of a large etching rate and then under a condition of a small etching rate. As a result, the film 8 can be processed with a high throughput without causing a damage by the dry etching to affect underlying gate oxide film 2.