| 摘要 |
PROBLEM TO BE SOLVED: To obtain a substrate treating device which can be improved in soaking characteristic. SOLUTION: A substrate treating device is constituted, in such a way that a wafer 5 which is a substrate to be treated is supported by a susceptor 6 in a quartz reaction furnace 1 and a lamp unit 2 is provided above the furnace 1. In addition, a condenser lens 11 which condenses light to the wafer 5 and the wafer surrounding section of the susceptor 6 is provided between the unit 2 and the furnace 1, so as to compensate for heat radiation, with the temperature of the outer peripheral section of the wafer 5 becoming equal to the temperature of the central part of the wafer 5, and at the same time, the central part of the wafer 5 does not overheat due to the condensed light.
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