发明名称 METHOD FOR MANUFACTURING, USE AND UTILIZING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer of superior mass production and reproducibility. SOLUTION: A process where a first member, which has a single-crystal semiconductor layer 5 on a semiconductor basic substance 1 with a separating layer 4 in between, is formed with a semiconductor wafer as raw material, a transfer process where the single-crystal semiconductor layer 5 is isolated by the isolation layer 4 to transfer onto a second member 2 formed of the semiconductor wafer, and a planarizing process where a surface of the semiconductor basic substance 1 is, after the transfer process, flattened to use the semiconductor basic substance as a semiconductor wafer, having uses other than that of the semiconductor wafer used for the first and second members, are contained.
申请公布号 JP2000349264(A) 申请公布日期 2000.12.15
申请号 JP19990334544 申请日期 1999.11.25
申请人 CANON INC 发明人 YONEHARA TAKAO;WATABE KUNIO;SAKAGUCHI KIYOBUMI;OMI KAZUAKI;SHIMADA TETSUYA
分类号 H01L27/12;H01L21/02;H01L21/20;H01L21/762;(IPC1-7):H01L27/12 主分类号 H01L27/12
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