TRENCH ISOLATION METHOD OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A trench isolation method of a semiconductor device is provided to guarantee a sufficient active region by intensifying an insulating characteristic of a trench isolation, and to prevent a defect such as a porousness by thermally processing an insulating layer in a trench. CONSTITUTION: A trench for isolating devices is formed in a predetermined region of a semiconductor substrate. After an insulating layer for device isolation is filled in the trench, impurities having the same conductivity type as that of the semiconductor substrate are injected into the trench filled with the insulating layer to improve an insulating characteristic of the device isolation.