METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING A METAL PLATING

摘要

PURPOSE: A method for manufacturing a thin film transistor using a metal plating is provided to simplify a manufacturing process and to improve reliability, by forming a lightly doped drain(LDD) structure by a simple metal plating process without an additional mask. CONSTITUTION: A polysilicon semiconductor layer is formed on a transparent insulating substrate(20). A gate oxidation layer(23) and a gate electrode(25) are sequentially formed on an intrinsic region of the semiconductor layer. A low-density ion implantation region is defined by a low-density ion implantation process using the gate electrode and gate oxidation layer as a mask. A metal plating process is performed to form a metal plating layer(35) on both sidewalls of the gate electrode. A high density ion implantation region is defined by a high density ion implantation process using the metal plating layer as a lightly doped drain(LDD) region mask. An activation process is performed regarding the resultant structure to form a high-density source/drain region and an LDD region on the semiconductor layer.