SEMICONDUCTOR MEMORY CELL AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A memory cell of a semiconductor device and a method for manufacturing the same are provided to prevent the pollution of a channel portion by forming a ferroelectric thin film as a sidewall. CONSTITUTION: The first insulating layer(22) is formed on a substrate(21). A gate(23) is formed on a predetermined portion of the first insulating layer(22). The second insulating layer(24) is formed on the gate(23). A sidewall(25) is formed at a sidewall of the gate(23) and a sidewall of the second insulating layer(24). A channel region(26) is formed on a surface and the sidewall of the second insulating layer(24). A source junction(261) and a drain junction(262) are formed on a surface of the first insulating layer(22). The third insulating layer(27) is formed on a whole surface except for a part of the source junction(261) and a part of the drain junction(262). An interlayer dielectric(28,30) is formed on a part of the third insulating layer(27). A data line(29) is formed on the inside of the interlayer dielectric(28,30). A bit line(31) is formed to penetrate the interlayer dielectric(28,30).