发明名称 |
INPUT OUTPUT CIRCUIT FOR HIGH SPEED SEMICONDUCTOR MEMORY DEVICE REDUCING TEST TIME |
摘要 |
PURPOSE: An input/output circuit is provided to reduce the time to test a built-in memory. CONSTITUTION: An input/output circuit(201) includes the first - eight pads(P0-P7) for inputting/outputting signals with the outside. A memory(211) stores data. The first - eight input/output units(221-228) are electrically connected to the pads(P0-P7). The first - four data buses(B0-B3) are electrically connected to the pads(P0-P7). The first - eight multiplexers(241-248) are electrically connected to one of the input/output units(221-228) and the data buses(B0-B3). The first - eight multiplexers(241-248) write data inputted from the data buses(B0-B3) into the memory(211) upon a direct access test mode of testing the memory(211) and also write data inputted from the input/output unit(221-228) into the memory(211) upon a normal mode.
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申请公布号 |
KR100275724(B1) |
申请公布日期 |
2000.12.15 |
申请号 |
KR19970060815 |
申请日期 |
1997.11.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, TAE-HYUN;KYUNG, KYE-HYUN |
分类号 |
G01R31/28;G11C7/00;G11C11/401;G11C29/00;G11C29/12;G11C29/48;(IPC1-7):G11C7/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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