METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCREASING HYDROGENATION EFFECT

摘要

PURPOSE: A method of forming a semiconductor device for increasing a hydrogenation effect is provided to perform a hydrogenation process by using a cap layer with a low hydrogen diffusion coefficient. CONSTITUTION: A source(22) and a drain(23) are formed on a substrate(21). An active layer is formed between the source(22) and the drain(23). An insulating layer(24) is formed to insulate the active layer. A gate(25) is formed on the insulating layer(24). An insulating layer(28) is formed to insulate each device of a transistor. Electrodes are formed on the source(22) and the drain(23), respectively. A plasma nitride layer(29) is formed on an upper portion of the whole structure. A cap layer(30) is formed on the plasma nitride layer(29). A thermal process is performed to diffuse hydrogen generated from the plasma nitride layer(29) to the transistor formed with the cap layer(30).