METHOD FOR MANUFACTURING A TRENCH TYPE ISOLATION LAYER OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a trench type isolation layer of a semiconductor device is provided to prevent an electric field from being concentrated, a gate oxidation layer from being deteriorated and an electrical characteristic from being deteriorated by a remaining gate electrode material, by rounding a profile of a silicon substrate even when a moat of a field oxidation layer is generated at a corner portion of a trench. CONSTITUTION: An anti-oxidizing pattern including a pad oxidation layer and an anti-oxidizing layer are formed on a silicon substrate(20). The exposed silicon substrate is etched to form a trench. The trench is filled with an insulating material. The anti-oxidizing layer and pad oxidation layer are eliminated. A profile of the silicon substrate at an upper corner portion of the trench becomes rounded by performing a heat treatment in a hydrogen atmosphere.