| 摘要 |
PROBLEM TO BE SOLVED: To improve light extracting efficiency from the inside part of a crystal on a light extraction face, and to improve outside light emitting efficiency. SOLUTION: In a method for manufacturing a semiconductor light emitting element, an n electrode 12 and a p electrode 13 are formed on the both upper and lower main faces of a semiconductor wafer on which a light emitting layer is formed, and sintered, and the n electrode 12 is patterned into a prescribed shape, and the semiconductor wafer is diced so as to be separated into plural semiconductor chips 16 in a prescribed dimension. In this case, the semiconductor wafer is separated into the plural semiconductor chips 16, and etched in aqueous solution nitrate with prescribed density so that the upper face of the light extraction face of the semiconductor chip 16 can be formed as a frost-shaped face 18a with prescribed facial roughness obtained by removing an alloy layer 14 other than the alloy layer under the n electrode 12, and the side face of the semiconductor chip 16 can be formed as a frost-shaped face 18b with prescribed facial roughness obtained by removing a crashed layer. |
