发明名称 COMPOSITIONS FOR STRIPPING OF PHOTORESIST IN FABRICATION OF INTEGRATED CIRCUITS
摘要 PROBLEM TO BE SOLVED: To obtain a photoresist stripping agent substitutable for a hologenated hydrocarbon by incorporating a specified mass % of dimethylsulfoxide (DMSO) or N-methylpyrrolidone (NMP) and a specified mass % of 3-methoxypropylamine (MOPA) in the photoresist stripping agent. SOLUTION: A mixture is prepared by mixing 30-95 mass % DMSO or NMP with 70-5 mass % MOPA, preferably 65-95% DMSO or NMP with 35-5% MOPA. It is more preferable that the mixture contains about 70 wt.% DMSO and 30 wt.% MOPA. This DMSO-MOPA mixture or NMP-MOPA mixture can be used as it is for stripping the photoresist but it is advantageous that a small amount of water i.e., 0-10 parts water is added to the 100 parts DMSO-MOPA mixture or NMP-MOPA mixture. A small amount of antiseptic (for example, catechol) is advantageously added.
申请公布号 JP2000347423(A) 申请公布日期 2000.12.15
申请号 JP20000110636 申请日期 2000.04.12
申请人 ELF ATOCHEM SA 发明人 LALLIER JEAN-PIERRE
分类号 G03F7/42;H01L21/027;H01L21/311;(IPC1-7):G03F7/42 主分类号 G03F7/42
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