| 摘要 |
PROBLEM TO BE SOLVED: To reduce the limitation in deflection direction of gas flow so as to improve the detection sensitivity in a semiconductor gas rate sensor by forming a nozzle hole and a gas flow passage so that the gas flow may be perpendicular to a semiconductor substrate. SOLUTION: In a lower semiconductor substrate 1, a deep hole being a gas flow passage 4 is formed by a semiconductor fine work technique such as etching, and a protruding part is formed on the boottom surface, while a nozzle hole 3 is formed thereat by etching. On the substrate 1, an upper substrate 2 where a through hole being a gas flow passage 4 is formed, and two pairs of heat wires 51, 53 and 52, 54 are formed on its upper surface is superposed so that both the positions of the passages 4, 4 may correspond each other, and the two 1, 2 are bound. A semiconductor gas rate sensor is constructed in this way. The holes 3 an the passage 4 are formed so that gas flow may be perpendicular to the semiconductor substrates when no angle speed works. In such a constitution, the gas flow is jetted out toward the heat wires 51, 53 and 52, 54 from the nozzle hole 3 by operating a pump, and deflection of the gas flow when the angle speed is applied is detected by the heat wires.
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