| 摘要 |
PURPOSE: A method for crystallizing semiconductors under non-vacuum is provided, which improves the productivity and decreases pollution of substrate by using a sequential lateral solidification(SLS) process, namely growing crystal in a way from a side surface. CONSTITUTION: The crystallization device using non-vacuum process comprises the following parts: a deposition device for forming an amorphous semiconductor layer on a glass substrate(9) by irradiating laser beam under N2 gas atmosphere; a washing(14)/drying(16) device; a first carrying device for moving a crystallized substrate to the washing/drying device, and a second carrying device for moving a washed and dried substrate to the crystallization device. The crystallization device using non-vacuum process is characterized in that the deposition device, washing/drying device and crystallization device are installed by in-line system. |
