| 摘要 |
PURPOSE: A method for manufacturing a thin film actuated mirror array is provided to prevent a MOS transistor from being damaged owing to a thermal cause. CONSTITUTION: The first sacrifice layer is formed by depositing and patterning a sacrifice material layer on an entire surface of an insulation substrate(510). A membrane(540) is formed on the first sacrifice layer, and one side thereof is contact with the insulation substrate(510). A MOS transistor(550) having a gate oxide layer(550a), a gate electrode(550b), a source region(550c), and a drain region(550d) is formed on the exposed insulation substrate(510) of a side of the membrane(540). An interlayer insulation layer(560) is formed so as to protect a top of the MOS transistor and isolate the MOS transistor from the exterior. A bottom electrode is formed on the membrane(540). An active layer(580) is formed on the bottom electrode(570) so that a part of the bottom electrode(570) may be exposed. A part of the interlayer insulation layer(560) is removed so that a part of the source region(550c) and a part of the drain region(550d) may be exposed. A top electrode(590) is formed on the active layer(580), and a drain pad(610) is formed so as to connect the drain region(550d) and the bottom electrode(570), which is exposed from the active layer(580). A passivation layer(620) is formed on the drain pad(610) and the MOS transistor(550). A common wiring layer(630) is formed on the passivation layer(620) so as to be connected with the top electrode(590). A mirror support part(660) is formed so as to be connected and supported with and by a part of the top electrode(590). A mirror(670) is formed on a top of the mirror support part(660).
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