THIN FILM TRANSISTOR, A LIQUID CRYSTAL DISPLAY AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for manufacturing a thin film transistor(TFT) is provided to shorten the time for crystallization by simultaneously crystallizing intrinsic amorphous silicon and impurity amorphous silicon, and to reduce a manufacturing time by performing an activation while performing a crystallization to polycrystalline silicon. CONSTITUTION: A substrate is prepared. An amorphous silicon layer, an insulating layer and a gate metal are consecutively evaporated on the substrate. The gate metal and insulating layer are patterned to form a gate electrode and a gate insulating layer. An impurity process and a catalyst metal coating process are performed on the amorphous silicon layer exposed by the gate electrode and gate insulating layer. A direct current voltage is applied in positions on the amorphous silicon layer, the positions being corresponding to each other with the gate electrode as a center, so that the impurity-processed first amorphous silicon and second amorphous silicon under the gate insulating layer are laterally crystallized to first and second polycrystalline silicon. The first polycrystalline silicon is defined as source/drain regions. Source/drain electrodes respectively contacting the source/drain regions are formed.