METHOD FOR FORMING WIRE OF SEMICONDUCTOR

摘要

PURPOSE: A method for forming lines of a semiconductor device is provided to form a contact of a semiconductor device by using only one low pressure chamber. CONSTITUTION: An insulating layer(2) is deposited on a lower line(1). A contact hole is formed by etching a part of the insulating layer(2). The semiconductor substrate(1) is moved to a low pressure chamber(10). A metal layer(3) is formed on the lower line(1) and the insulating layer(2) under a low pressure. The pressure of chamber(10) is lowered to the lowest pressure. A wafer is heated and an entrance of the contact hole is closed by the metal layer(3). The metal layer(3) is buried into the contact hole(3) by heightening the pressure of the chamber(10).