| 摘要 |
Processes for the preparation of substrates for direct adhesion techniques, e.g. following use of the substrate to transfer a thin film onto another substrate, involves changing the order or modifying the parameters of stages involving high temperature annealing with hydrogen, selective chemical etching, and particular smoothing and cleaning techniques for direct bonding of substrates. Preparation of the surface of a substrate for different techniques of direct bonding of semiconductor slices, where the substrate has been subjected to cleavage by the implantation of ions creating strong discontinuities of the surface (2) between its center and its periphery above a zone (4) of point faults of thickness less than 20 microns in the depth of the silicon body, comprises the following stages: (a) selective chemical etching (I) using a mask to etch a height of peaks and other discontinuities below 20 microns ; (b) selective chemical etching (II) using gases to etch peaks and other discontinuities of thickness below 5 microns with selectivity of 10<6>:1; (c) high temperature annealing; (d) smoothing by plasma-assisted etching using gases or by chemical-mechanical polishing to thickness less than 20 nm, to obtain a depletion layer (3) (e) cleaning after smoothing; and (f) cleaning before bonding. Independent claims are given that describe similar processes with changes in the order of, or modification of the parameters of, the above stages.
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