| 摘要 |
PROBLEM TO BE SOLVED: To suppress the secular change of a thin film thermistor element and to raise the high-temperature durability and the like of the element by a method wherein a thermistor thin film has a bixbyite type crystal structure. SOLUTION: A base substrate 12 is held by a substrate holder to heat the substrate 12 and with a high-frequency voltage applied to a sinter target, the holder is rotated at a prescribed speed of rotation and when the substrate 12 passes through the upper part of a notch in a shield cover, particles to come flying from the sinter target are sputtered to form a thermistor thin film 13 on the substrate 12, while when the substrate 12 passes through the upper part of the notch in the shield cover, an oxidation of the thin film 13 and an annealing of the thin film 13 are performed. That is, the sputtering, the oxidation and the annealing are alternately performed to form the thin film 13. The formed thin film 13 is heat-treated, whereby a thermistor thin film 13 having a bixbyite type crystal structure is obtained. By the way, the thin film 13 is heat-treated at a temperature of 1100 deg.C or lower.
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