| 摘要 |
PURPOSE: A method for manufacturing a T-shaped gate is provided to increase yield by stably controlling the length of the T-shaped gate, and to reduce a manufacturing cost by forming the T-shaped gate without using a conventional electron-beam writing technique. CONSTITUTION: The first insulating layer and the first metal layer are sequentially formed on a substrate(10). A mask material is formed on the first metal layer to expose a gate pattern region. After the second insulating layer is formed on the surface and side surface of the mask material to expose only a central portion of the gate pattern region, the first metal layer and the first and second insulating layers are eliminated to expose the substrate of the exposed central portion. A gate electrode material(17,18,19) is formed on the entire surface, and the remaining mask material, first metal layer and first insulating layer are eliminated.
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