TRENCH ISOLATING METHOD OF A NON VOLATILE MEMORY DEVICE

摘要

PURPOSE: A trench isolating method of a non volatile memory device is provided to prevent a lateral surface of a conductive layer for a floating gate from being oxidized in an oxidizing process for forming an oxidation layer on an inner wall of a trench, by forming an oxidation stop layer while the conductive layer and mask layer are patterned so as to form the trench. CONSTITUTION: A pad oxidation layer(22) is formed on a semiconductor substrate(20). A conductive layer(24) is formed on the pad oxidation layer. A mask layer(26) is formed on the conductive layer. The mask layer and conductive layer in a non-active region are etched away. An oxidation stop layer(30) is formed on the entire surface of the resultant structure. A trench is formed in the non-active region of the semiconductor substrate. An oxidation layer is formed on an inner wall of the trench. The trench is filled with an insulating material.