| 摘要 |
PURPOSE: A method for manufacturing a silicide layer of a semiconductor device is provided to shorten a manufacturing time and to optimize an operating characteristic, by simultaneously forming a salicide layer and a polycide layer. CONSTITUTION: A gate electrode(22a,22b) is formed on a semiconductor substrate(21) having a peripheral circuit region and a cell region. The first oxidation layer(23) and a nitride layer are sequentially formed on the entire surface including the gate electrode. The second oxidation layer(26) of a thickness enough to completely cover the gate electrodes is formed on the entire surface on which the nitride layer is formed. And, the second oxidation layer is patterned to expose the nitride layer on the gate electrode. A photoresist layer pattern is formed only in the cell region, and is used to eliminate the second oxidation layer remaining in the peripheral circuit region. The photoresist layer pattern and exposed nitride layer are eliminated to form a gate sidewall on a side of the gate electrode in the peripheral circuit region. A high melting metal layer and capping layer are formed, and a silicide process is performed regarding the entire surface, so that a salicide layer(29) and a polycide layer(30) are formed in the peripheral circuit region and on the gate electrode in the cell region, respectively.
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