| 摘要 |
PURPOSE: A method for manufacturing a silicide layer of a semiconductor device is provided to reduce a leakage current by forming a phosphorous injection layer for preventing a Ti-silicide layer from diffusing, and to decrease resistance by forming a thick Ti-silicide layer. CONSTITUTION: A field oxidation layer(12) is formed on a semiconductor substrate(11). A gate oxidation layer(13) and a polysilicon layer(14) are evaporated and patterned on the semiconductor substrate to form a gate. An insulating layer(15) is evaporated on the semiconductor substrate, and is etched-back to form an insulating layer sidewall on a side surface of the gate. A high density impurity ions are injected into the semiconductor substrate, and a heat treatment is performed, thereby forming a source/drain region(16). Phosphorous ions are injected into the polysilicon layer and source/drain region. Silicon ions are injected into the semiconductor substrate to make amorphous the surface of the polysilicon layer and source/drain region. A Ti layer is formed by performing a Ti-sputtering on the semiconductor substrate. After a first thermal annealing process is performing on the semiconductor substrate, a remaining Ti layer is eliminated. A Ti-silicide layer(18) is selectively formed only in the amorphous surface of the polysilicon layer and source/drain region by a second thermal annealing process.
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