NON-VOLATILE SEMICONDUCTOR MEMORY CELL, COMPRISING A METAL-OXIDE DIELECTRIC AND A METHOD FOR PRODUCING THE SAME

摘要

The invention relates to a non-volatile semiconductor memory cell and a method for producing the same. In said method, a conventional, dielectric ONO layer (10) is replaced by an extremely thin metal-oxide layer (6), consisting of WOx and/or TiO2. An additional improvement in the integration density and the control voltage necessary for the semiconductor memory cell is achieved as a result of the high relative dielectric constant of these materials.