LOW TEMPERATURE SACRIFICIAL OXIDE FORMATION

摘要

A method for depositing a sacrificial oxide for fabricating a semiconductor device includes preparing p-doped silicon regions (306) on a semiconductor wafer (300) for depositing a sacrificial oxide (302) on the p-doped silicon regions (306). The method also includes the step of placing the wafer in an electrochemical cell (100) such that a solution (312) including electrolytes interacts with the p-doped silicon regions to form a sacrificial oxide (302) on the p-doped silicon regions when a potential difference is provided between the wafer (300) and the solution (312). Processing the wafer using the sacrificial oxide layer is also included.