| 摘要 |
<p>A support (55) comprises a dielectric (60) covering a primary electrode (70), the dielectric (60) having a surface (75) adapted to receive a substrate (25) and a conduit (160) that extends through the dielectric (60). The thickness of a portion of the dielectric (60) between an edge (195) of the primary electrode (70) and asurface (180) of the conduit (160) is sufficiently large to reduce the incidence of plasma formation in the conduit (160) when the primary electrode (70) is charged by an RF voltage to form a plasma of gas in the chamber (30) during processing of the substrate (25).</p> |
