发明名称 PROCESS OF USING SILOXANE DIELECTRIC FILMS IN THE INTEGRATION OF ORGANIC DIELECTRIC FILMS IN ELECTRONIC DEVICES
摘要 <p>The invention relates to cured dielectric films and a process for their manufacture which are useful in the production of integrated circuits. Dual layered dielectric films are produced in which a lower layer comprises a non-silicon containing organic polymer and an upper layer comprises an organic, silicon containing polymer. Such films are useful in the manufacture of microelectronic devices such as integrated circuits (IC's). In one aspect the upper layer silicon containing polymer has less than 40 Mole percent carbon containing substituents, and in another aspect it has at least approximately 40 Mole percent carbon containing substituents.</p>
申请公布号 WO0075979(A1) 申请公布日期 2000.12.14
申请号 WO2000US15733 申请日期 2000.06.08
申请人 ALLIEDSIGNAL INC. 发明人 FIGGE, LISA;JUDE, DUNNE;SHI-QING, WANG
分类号 H01L21/768;H01L21/312;H01L23/532;(IPC1-7):H01L21/316 主分类号 H01L21/768
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