发明名称 |
Process for measuring the positioning errors of structured patterns used in semiconductor production comprises forming test grating structures, and measuring the light bent at the structures |
摘要 |
<p>Positioning errors of structured patterns are measured by forming test grating structures (4, 7) in at least one plane; measuring light bent at the structures; determining connection between bent light and positioning of both test lattice structures to each other by calibrating and simulating; and determining positioning errors using intensity measurement of bent light of bending level(s). Preferred Process: The test grating structure is produced by etching a metal layer, an insulating layer or a semiconductor.</p> |
申请公布号 |
DE19925831(A1) |
申请公布日期 |
2000.12.14 |
申请号 |
DE1999125831 |
申请日期 |
1999.06.07 |
申请人 |
INSTITUT FUER HALBLEITERPHYSIK FRANKFURT (ODER) GMBH |
发明人 |
BAUER, JOACHIM;BISCHOFF, JOERG |
分类号 |
G03F7/20;H01L23/544;(IPC1-7):G03F9/00;G01J1/22 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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