发明名称 Process for measuring the positioning errors of structured patterns used in semiconductor production comprises forming test grating structures, and measuring the light bent at the structures
摘要 <p>Positioning errors of structured patterns are measured by forming test grating structures (4, 7) in at least one plane; measuring light bent at the structures; determining connection between bent light and positioning of both test lattice structures to each other by calibrating and simulating; and determining positioning errors using intensity measurement of bent light of bending level(s). Preferred Process: The test grating structure is produced by etching a metal layer, an insulating layer or a semiconductor.</p>
申请公布号 DE19925831(A1) 申请公布日期 2000.12.14
申请号 DE1999125831 申请日期 1999.06.07
申请人 INSTITUT FUER HALBLEITERPHYSIK FRANKFURT (ODER) GMBH 发明人 BAUER, JOACHIM;BISCHOFF, JOERG
分类号 G03F7/20;H01L23/544;(IPC1-7):G03F9/00;G01J1/22 主分类号 G03F7/20
代理机构 代理人
主权项
地址