发明名称 |
Production of structures in conducting materials comprises producing a pattern of longitudinal macropores in a base body, leaving areas of the base body with the structure of the required structure pore-free, and etching |
摘要 |
Production of structures with relatively small wall thickness and high wall height made from conducting material comprises producing a pattern of longitudinal macropores (12) in a base body (10) with a longitudinal extension in the height of each structure, leaving areas (30, 32, 34) of the base body with the structure of the required structure pore-free, and subsequently removing the porous material by etching to obtain the required structure. Preferred Features: The structure is n-type Si. The length of the longitudinal macropores is selected so that the structure has a wall height whose height extension is more than ten times the wall thickness.
|
申请公布号 |
DE19926769(A1) |
申请公布日期 |
2000.12.14 |
申请号 |
DE19991026769 |
申请日期 |
1999.06.13 |
申请人 |
MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
BIRNER, ALBERT;NIELSCH, KORNELIUS;LI, AN-PING;MUELLER, FRANK |
分类号 |
B81B1/00;(IPC1-7):B81C1/00;H01L21/306;H01L21/311 |
主分类号 |
B81B1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|