发明名称 Production of structures in conducting materials comprises producing a pattern of longitudinal macropores in a base body, leaving areas of the base body with the structure of the required structure pore-free, and etching
摘要 Production of structures with relatively small wall thickness and high wall height made from conducting material comprises producing a pattern of longitudinal macropores (12) in a base body (10) with a longitudinal extension in the height of each structure, leaving areas (30, 32, 34) of the base body with the structure of the required structure pore-free, and subsequently removing the porous material by etching to obtain the required structure. Preferred Features: The structure is n-type Si. The length of the longitudinal macropores is selected so that the structure has a wall height whose height extension is more than ten times the wall thickness.
申请公布号 DE19926769(A1) 申请公布日期 2000.12.14
申请号 DE19991026769 申请日期 1999.06.13
申请人 MAX-PLANCK-GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V. 发明人 BIRNER, ALBERT;NIELSCH, KORNELIUS;LI, AN-PING;MUELLER, FRANK
分类号 B81B1/00;(IPC1-7):B81C1/00;H01L21/306;H01L21/311 主分类号 B81B1/00
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