| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is equipped with an interlayer insulating film of low relative dielectric constant and excellent in characteristics. SOLUTION: This semiconductor device is equipped with a single crystal silicon substrate 1 provided with a linear conductive layer 2 on its surface. A thermally polymerized hydrocarbon film 3 of small relative dielectric constant is formed on the conductive layer 2, and a modified SOG film mask 5 comparatively small in relative dielectric constant is formed on the hydrocarbon film 3. The modified SOG film mask 5 functions as an etching mask for forming a contact hole (viahole) 6 which leads to the conductive layer 2. Furthermore, a thermally polymerized hydrocarbon film 7 is formed on the modified SOG film mask 5, and a trench 8 communicating with the contact hole 6 is cut in the hydrocarbon film 7. An upper metal wiring 9 is formed inside the contact hole 6 and the trench 8 so as to be electrically connected to the conductive layer 2.
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