METHOD OF FABRICATING SEMICONDUCTOR DEVICE EMPLOYING COPPER INTERCONNECT STRUCTURE

摘要

The present invention provides a method of forming interconnect structure in a process for fabricating semiconductor device, which enables high-reliability copper interconnect. The present invention uses the structure comprised of TiN layer (32) and intermediate aluminum layer (34) as a diffusion barrier. A copper layer (40) is deposited on the aluminum layer (34), after aluminum layer (34) is deposited on the TiN layer (32). At this time, with the aluminum layer (34) being made to the minimum thickness, metallization is formed substantially with the copper.