METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to guarantee a processing margin in a subsequent process and to improve reliability, by eliminating a dishing phenomenon and an erosion phenomenon, and by removing recess on a contact surface while using a chemical mechanical polishing(CMP) method and a wet etching method in a spin etcher. CONSTITUTION: A hole is formed by selectively etching an insulating layer. A conductive layer is formed on the entire surface of the resultant structure. A polishing target not exposing the surface of the insulating layer is established to polish the conductive layer by a chemical mechanical polishing(CMP) method. An etching target exposing the surface of the insulating layer is established to wet-etch the conductive layer in a spin etcher.